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 Si4750DY
New Product
Vishay Siliconix
Smart Power High-Side Switch
PRODUCT SUMMARY
Overvoltage Protection Vbb(AZ) (V)
41
Operating Voltage Vbb(on) (V)
5 - 15
On-State Resistance RON (mW)
50
Nominal Load Current IL(nom) (A)
2.0
FEATURES
D D D D D D D Overload Protection Current Limitation Short Circuit Protection Thermal Shutdown with Restart Overvoltage Protection (Including Load Dump) Reverse Battery Protection with External Resistor CMOS Compatible Input
D Start A Cold Filament Lamp D ESD Protection D Low Standby Current
APPLICATIONS
D All Types of Resistive, Inductive and Capacitive Loads D mC Compatible Power Switch for 12-V dc Applications D Replaces Electromechanical Relays and Discrete Circuits
DESCRIPTION
The Si4750DY is an n-channel verticle power FET with charge pump, ground referenced CMOS compatible input, and fully protected by embedded protection functions.
FUNCTIONAL BLOCK DIAGRAM
VBAT Voltage Regulator ESD Controller IN ESD Overload and Short Circuit Charge Pump and Gate Drive
MOSFET Die
VST
Load Source
S
Controller IC
Thermal Shutdown with Hysterisis
Load Sense Diode
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
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1
Si4750DY
Vishay Siliconix
PIN CONFIGURATION
New Product
SO-8
1 2 3 4 Top View Ordering Information: Si4750DY--E3 Si4750DY-T1--E3 (with Tape and Reel) 8 7 6 5
TRUTH TABLE IN
H L
MOSFET
ON OFF
PIN DESCRIPTION Pin Number
1 2, 3, 4 5, 6 7 8
Symbol
IN VBAT S GND VST Input Logic Signal
Description
VBAT/MOSFET Drain, Bypass Cap is Mandatory MOSFET Source Ground Status Output Pin
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Supply Voltage Supply Voltage For Full Short Circuit Protection (TA = -40 to 150_C) Continuous Input Voltage Load Current (Short Circuit Current--see page 3) Current Through Input Pin (dc) Operating Temperature Storage Temperature Power Dissipationa Inductive Load Switch-Off Energy Dissipation Single Pluse (TA = 25_C) Load Dump Protectionb, c (td = 15 ms, VIN = low or high, Vbb = 14.5 V) Electrostatic Discharge Voltage (Human Body Model)d Input Pin All Other Pins
Symbol
Vbb Vbb(SC) VIN IL IIN TA Tstg Ptot EAS VLOADDUMP VESD
Limit
15 15 -0.7 to 7.5 Self-Limit "1 -40 to 150 -55 to 150 1.14 20 25 "1.2 "5
Unit
V
A mA _C W mJ V kV
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case (Drain)a
Symbol
RthJA RthJC
Minimum
Typical
88 29
Maximum
110 36
Unit
_C/W
Notes a. When Mounted on 1" x 1" PCB FR4 Board. b. Not tested, specified by design. c. VLOADDUMP is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. witha 150-W resistor in GND connection. A resistor for the protection of the input is integrated. d. According to ANSI EOS/ESD-S5.1-1983 ESD STM5.1-1998.
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2
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
Si4750DY
New Product
SPECIFICATIONS
Test Conditions Unless Otherwise Noted Parameter Symbol
TA = 25_C, Vbb =14.5 V
Vishay Siliconix
Min
Typ
Max
Unit
Load Switching Capabilities and Characteristics
On-State Resistance Nominal Load Current Turn-On- Time to 90% VOUT Turn-Off Time to 10% VOUT Slew Rate On Slew Rate Off rON IL(nom) tON toff dV/dton -dV/dton IL = 2 A CL = 2 mA A, IL = 2 A, Vbb = 9 to 14.5 V 34 2 70 60 0.22 0.08 150 150 50 mW A ms
V/ms
Operating Parameters
Operating Voltage Undervoltage Shutdown of Charge Pump Undervoltage Restart of Charge Pump Standby Current Leakage Output Current (Included in Ibb(off)) Vbb(on) Vbb(under) Vbb(ucp) Ibb(off) IL(off) TA = -40 to 85_C, VIN = 0 V VIN = 0 V TA = -40 to 85_C 9 6.7 7.1 70 0.5 41 8 8 mA V
Protection Features
Initial Peak Short Circuit Current Limit Thermal Overload Trip Temperature Thermal Hysteresis IL(SC ) L(SCp) TJ THYS tm = 500 ms, TA = 25_C tm = 500 ms, TA = 25_C IL = 2 A 150 12 21 19 A
_C
Reverse Battery
Reverse Batteryb Drain-Source Diode Voltage -Vbb -VON VOUT > Vbb, TJ = 150_C 600 25 V mV
Input
Input Turn-On Threshold Voltage Input Turn-Off Threshold Voltage Input Threshold Hysteresis Off-State Input Current On-State Input Current Input Resistance VIN(T+) VIN(T-) DVIN(T) IIN(off) IIN(on) RL VIN = 0.7 V, See Figure 1 VIN = 5 V, See Figure 1 Input Resistance, See Figure 1 3000 See Figure 1 0.8 1 2 2 mA kW 2.3 3.0 V
Notes a. Not to exceed TPULSE = 50 ns. b. Requires a 150-W resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation. Input current has to be limited. (See Maximum Ratings, page 2.) http://www.campw.com/
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
www.vishay.com
3
Si4750DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VGS @ 25_C
50 rDS(on) - Drain-Source On-Resistance (MW) 1.6 1.4 46 Normalized rDS(on) () 1.2 1.0 0.8 0.6 0.4 0.2 30 4.5 0.0 -50
Normalized rDS(on) vs. Temperature
42
38
34
5.5
6.5
7.5 VGS (V)
8.5
9.5
10.5
-25
0
25
50
75
100
125
150
Temperature (_C)
Typical Input Threshold Voltage
3.0 2.5 2.0 VIN (th) 1.5 1.0 0.5 0.0 -50 Vbb = 14.5 V IL = 2 A CL = 10 mF -25 0 25 TA (_C) 50 75 100 IIN (mA) On 350 300 250 200 150 100 50 0 0 1 2
Typical Input Current
Vbb = 14.5 V IL = 2 A CL = 10 mF
Off
3
4
5
6
7
8
VD - Analog Voltage (V)
Typical Standby Current
120 100 80 Ibb(off) (mA) 15 60 40 20 0 -50 5 IL (A) 14.5 V Vbb = 14.5 V VIN = Low IL = 2 A CL = 10 mF 25
Initial Peak Current Limit Under A 2-A Lamp Load
Vbb = 14.5 V 20
10
-25
0
25 TA (_C)
50
75
100
0 -50
-25
0
25 TA (_C)
50
75
100
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4
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
Si4750DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Initial Shutdown Time Under A 2-A Lamp Load
Vbb = 14.5 V 80
Vishay Siliconix
1.2 1.0 Shutdown Time (mS) 0.8
100
Maximum Allowable Load Inductance For A Single Switch Off
60 0.6 0.4 0.2 0.0 -50 20 L (mH)
40
-25
0
25 TA (_C)
50
75
100
0 0.0
0.5
1.0
1.5
2.0 IL (A)
2.5
3.0
3.5
250
Maximum Inductive Switch Off Energy Single Pulse
L = 0.1 mH
700 600 500 Vbb = 14.5 V IL = 2 A
toff vs. CL
200
EAS (mJ)
150 toff (ms)
400 300 200
100
50 100 0 0.0 0 0.5 1.0 1.5 IL (A) 2.0 2.5 3.0 3.5 1 10 100 1K CL (nF) 10 K 100 K 1M
250
Typical Turn-On Time
IL = 2 A CL = 10 mF
180 150 120
Typical Turn-Off Time
IL = 2 A CL = 10 mF
200
150 ton (ms) toff (ms) 9V 90 60 14.5 V 50 30 0 -50
9V
100
14.5 V
0 -50
-25
0
25 TA (_C)
50
75
100
-25
0
25 TA (_C)
50
75
100
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
www.vishay.com
5
Si4750DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Typical Slew Rate On
0.30 14.5 V 0.25 Slew Rate On (V/ms) 0.20 0.15 0.10 0.05 0.00 -50 9V IL = 2 A CL = 10 mF 0.9 0.8 0.7 Slew Rate Off (V/ms) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 14.5 V 9V IL = 2 A CL = 10 mF
Typical Slew Rate Off
-25
0
25
50
75
100
-25
0
25 TA (_C)
50
75
100
Temperature (_C)
SETUP
Ibb IIN VIN Vbb IN IL VON 40 V GND IGND Vbb RGND VOUT VON Clamped to 45 V Typical GND OUT
+Vbb
Si4750DY OUT
VON
FIGURE 1.
FIGURE 2. Inductive and Overvoltage Output Clamp
-Vbb Logic IN IN OUT ESD-ZDL IL GND RGND Signal Ground RL Power Ground
GND
RGND = 150 W, RL = 3.5 kW Typical Temperature protection is not active during inverse current.
FIGURE 3. Input Circuit (ESD Protection)
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FIGURE 4. Reverse Pattery Protection
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
6
Si4750DY
New Product
TIMING DIAGRAMS
IN
Vishay Siliconix
IN
VOUT Vbb 90% ton dV/dton 10% toff dV/dtoff
VOUT t
IL t
FIGURE 5. Vbb Turn-On
FIGURE 6. Switching A Resistive Load, Turn-on/0ff Time and Slew Rate Definition
IN
IN
OUT
VOUT
IL t IL t
FIGURE 7. Switching A Lamp
FIGURE 8. Switching An Inductive Load
IN t
IN
VOUT IL IL(SCp)
IL(SCr)
TJ t
tm t
toff(SC)
FIGURE 9. Turn-On Into Short Circuit Driving A Cold Filament
FIGURE 10. Overtemperature: Reset If TJ < TJT
Document Number: 72219 S-32411--Rev. B, 24-Nov-03
www.vishay.com
7
Si4750DY
Vishay Siliconix
TIMING DIAGRAMS
New Product
VON
Vbb(ucp) Vbb(under) Vbb
FIGURE 11. Undervoltage Restart of Charge Pump
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8
Document Number: 72219 S-32411--Rev. B, 24-Nov-03


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